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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2507 DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min) *Fast Switching Speed *Collector-Emitter Saturation Voltage: VCE(sat)= 0.7V(Max.)@ IC= 10A APPLICATIONS *Designed for use in high-voltage, high-speed , power switching in inductive circuit , they are particularly suited for 115 and 220V switchmode applications such as switching regulator's, inverters. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VALUE 500 UNIT V Collector Current-Continuous Collector Current-Peak w w scs .i w 400 7 V V 20 A 40 7 14 200 150 -55~150 A A A W .cn mi e Base Current-Continuous Base Current-Peak Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range IBM PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 0.625 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SC2507 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 0.7 V VBE(sat) ICBO ICEO Base-Emitter Saturation Voltage IC= 10A; IB= 1A 1.5 V A A Collector Cutoff Current VCB= 500V; IE= 0 VCE= 320V; IB= 0 100 Collector Cutoff Current 100 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE-1 DC Current Gain hFE-2 DC Current Gain fT Current-Gain--Bandwidth Product Switching times ton tstg tf Turn-on Time w ww scs .i IC= 10A; VCE= 2V IC= 20A; VCE= 2V IC= 1A; VCE= 10V .cn mi e 15 8 1.0 mA 20 MHz 1.0 IC= 10A, IB1= -IB2= 2A RL= 3; VBB2= 4V s s s Storage Time 3.0 Fall Time 0.7 isc Websitewww.iscsemi.cn 2 |
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